AN INEXPENSIVE MANUAL RESET CONTROL FOR STEPPER MOTORSMORRIS D; DUNLAVY D; TYLER IL et al.1979; J. PHYS. E; GBR; DA. 1979; VOL. 12; NO 5; PP. 367-368Article

GENERATION OF CO₂ PULSES BY FREE INDUCTION DECAY IN KCL: KREO₄AHRENKIEL RK; DUNLAVY D; SIEVERS AJ et al.1980; OPT. COMMUNIC.; NLD; DA. 1980; VOL. 32; NO 3; PP. 503-506; BIBL. 7 REF.Article

GENERATION OF ULTRASHORT CO₂ PULSES BY FREE-INDUCTION DECAY IN KCL: KREO₄AHRENKIEL RK; FIGUEIRA JF; DUNLAVY D et al.1979; LOS ALAMOS CONFERENCE ON OPTICS '79/1979/LOS ALAMOS NM; USA; WASHINGTON: SPIE; DA. 1979; PP. 332-357; BIBL. 5 REF.Conference Paper

REDUCTION OF FAST SURFACE STATES ON P-TYPE GAASAHRENKIEL RK; WAGNER RS; PATTILO S et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 8; PP. 700-703; BIBL. 12 REF.Article

DEEP LEVEL TRANSIENT SPECTROSCOPY USING CAMAC COMPONENTSJERVIS TR; TETER WM; COLE T et al.1982; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1982; VOL. 53; NO 8; PP. 1160-1162; BIBL. 6 REF.Article

LASER ANNEALING OF NATIVE OXIDES ON GAASAHRENKIEL RK; ANDERSON G; DUNLAVY D et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 4; PP. 279-281; BIBL. 9 REF.Article

Photoluminescence lifetime in heterojunctionsAHRENKIEL, R. K; DUNLAVY, D. J; HANAK, T et al.Solar cells. 1988, Vol 24, Num 3-4, pp 339-352, issn 0379-6787Conference Paper

Minority-carrier lifetime in ITO/InP heterojunctionsAHRENKIEL, R. K; DUNLAVY, D. J; HANAK, T et al.Journal of applied physics. 1988, Vol 64, Num 4, pp 1916-1921, issn 0021-8979Article

The density of states at GaAs/negative oxide interfacesAHRENKIEL, R. K; DUNLAVY, D. J.Solid-state electronics. 1984, Vol 27, Num 5, pp 485-489, issn 0038-1101Article

Corroborative evidence for the existence of selenium vacancies in CuInSe₂ crystalsABOU-ELFOTOUT, F; KAZMERSKI, L. L; DUNLAVY, D. J et al.Solar cells. 1985, Vol 14, Num 2, pp 197-200, issn 0379-6787Article

Collision energy dependence of Penning ionization electron spectra in crossed supersonic beams : He^*(2 ¹S)+N₂DUNLAVY, D. C; MARTIN, D. W; SISKA, P. E et al.The Journal of chemical physics. 1990, Vol 93, Num 7, pp 5347-5348, issn 0021-9606, 2 p.Article

Intrinsic defect states in CuInSe₂ single crystalsABOU-ELFOTOUH, F; DUNLAVY, D. J; COUTTS, T. J et al.Solar cells. 1989, Vol 27, Num 1-4, pp 237-246, issn 0379-6787Conference Paper

High speed characterization of photovoltaic devicesAHRENKIEL, R. K; DUNLAVY, D. J; HAMAKER, H. C et al.Solar cells. 1987, Vol 21, pp 353-369, issn 0379-6787Conference Paper

Intensity-dependent minority-carrier lifetime in III-V semiconductors due to saturation of recombination centersAHRENKIEL, R. K; KEYES, B. M; DUNLAVY, D. J et al.Journal of applied physics. 1991, Vol 70, Num 1, pp 225-231, issn 0021-8979, 7 p.Article

Minority-carrier lifetime in n-Al_0.38Ga_0.62AsAHRENKIEL, R. K; DUNLAVY, D. J; LOO, R. Y et al.Journal of applied physics. 1988, Vol 63, Num 10, pp 5174-5176, issn 0021-8979Article

Photoluminescence studies of CuInSe₂ABOU-ELFOTOUH, F. A; DUNLAVY, D. J; HERMANN, A. M et al.Photovoltaic specialists conference. 17. 1984, pp 1410-1411Conference Paper

Non-linear recombination processes in photovoltaic semiconductorsAHRENKIEL, R. K; KEYES, B. M; DUNLAVY, D. J et al.Solar cells. 1991, Vol 30, Num 1-4, pp 163-176, issn 0379-6787Conference Paper

Ultralow recombination velocity at Ga_0.5In_0.5P/GaAs heteroointerfacesOLSON, J. M; AHRENKIEL, R. K; DUNLAVY, D. J et al.Applied physics letters. 1989, Vol 55, Num 12, pp 1208-1210, issn 0003-6951Article

Photoluminescence of CuInSe₂ and its intrinsic defect statesABOU-ELFOTOUH, F; ALKUHAIMI, S; MOUSTAFA, R et al.Photovoltaic specialists conference. 19. 1987, pp 770-774Conference Paper

Surface compensation of p-InP as observed by capacitance dispersionAHRENKIEL, R. K; SHELDON, P; DUNLAVY, D et al.Applied physics letters. 1983, Vol 43, Num 7, pp 675-676, issn 0003-6951Article

Crystal growth and photoelectrical properties of Cu_xAg_1-xInSe₂ and CuIn_yGa_1-ySe₂ solid solutionsCISZEK, T. F; BACEWICZ, R; DURRANT, J. R et al.Photovoltaic specialists conference. 19. 1987, pp 1448-1453Conference Paper

Minority-carrier lifetime measurements and defect-structure identification for gallium arsenide grown on sapphire by organometallic vapor phase epitaxyTIMMONS, M. L; AHRENKIEL, R. K; AL-JASSIM, M. M et al.Journal of applied physics. 1988, Vol 64, Num 11, pp 6259-6263, issn 0021-8979Article

Growth and characterization of GaAs/Ge epilayers grown on Si substrates by molecular beam epitaxySHELDON, P; YACOBI, B. G; JONES, K. M et al.Journal of applied physics. 1985, Vol 58, Num 11, pp 4186-4193, issn 0021-8979Article

Electron mobility in p-GaAs by time of flightAHRENKIEL, R. K; DUNLAVY, D. J; GREENBERG, D et al.Applied physics letters. 1987, Vol 51, Num 10, pp 776-778, issn 0003-6951Article

Minority-carrier properties of 1.93-eV Al_0.37Ga_0.63As grown by MOCVDAHRENKIEL, R. K; GREENBERG, D; DUNLAVY, D. J et al.Photovoltaic specialists conference. 19. 1987, pp 1180-1186Conference Paper